Design of deep-nanometer-scale capacitors and associated materials challenges

The International Technology Roadmap for Semiconductors (ITRS) projects that the spatial resolution of features in integrated circuits will eventually be well at nanoscopic dimensions. As a result, there is, presently, an active interest in the design of nano-scale circuit elements such as transistors, resistors, and “capacitors”. As with all circuit elements, the materials for fabrication of nano-scale capacitors are an important factor. We analyse these requirements for engineering nanoscopic capacitors, and show that, at deep-nanometer-scales, dielectric properties such as dielectric constant, dielectric strength, and dielectric relaxation determine the practicality of such capacitors. These properties, in turn, are closely linked to the structure, purity, method of fabrication, and dimensions of the capacitor components and materials. PACS: 77.22.-d; 77.55.+f.; 78.20.Ci; 85.35.-p